High-average power EUV light source for the next-generation lithography by laser-produced plasma

  • Akira Endo
  • Published 2004 in
    IEEE Journal of Selected Topics in Quantum…
Laser-produced plasma is expected to fulfill the strict requirement as an extreme ultraviolet (EUV) light source for the next-generation lithography with 115-W average power at the intermediate focus, in terms of stability, minimum contamination, and cost of ownership. A liquid xenon micro jet is employed in our experimental facility to confirm the… (More)