High Uniformity Normally-OFF GaN MIS-HEMTs Fabricated on Ultra-Thin-Barrier AlGaN/GaN Heterostructure

@article{Huang2016HighUN,
  title={High Uniformity Normally-OFF GaN MIS-HEMTs Fabricated on Ultra-Thin-Barrier AlGaN/GaN Heterostructure},
  author={Sen Huang and Xinyu Liu and Xinhua Wang and Xuanwu Kang and Jinhan Zhang and Qilong Bao and Ke Yi Wei and Yingkui Zheng and Chao Zhao and Hongwei Gao and Qian Sun and Zhaofu Zhang and Kevin J. Chen},
  journal={IEEE Electron Device Letters},
  year={2016},
  volume={37},
  pages={1617-1620}
}
Ultra-thin-barrier (UTB) AlGaN/GaN heterostructure is utilized for fabrication of normally-OFF GaN metal- insulator-semiconductor high-electron-mobility transistors (MISHEMTs). The sheet resistance of 2-D electron gas in the UTB Al<sub>0.22</sub>Ga<sub>0.78</sub>N(5-nm)/GaN heterostructure is effectively reduced by SiN<sub>x</sub> passivation grown by low… CONTINUE READING