High-Temperature Tunneling Quantum-Dot Intersublevel Detectors for Mid-Infrared to Terahertz Frequencies

@article{Bhattacharya2007HighTemperatureTQ,
  title={High-Temperature Tunneling Quantum-Dot Intersublevel Detectors for Mid-Infrared to Terahertz Frequencies},
  author={Paritosh Bhattacharya and Xiaohua Su and G. Ariyawansa and A. G. Unil Perera},
  journal={Proceedings of the IEEE},
  year={2007},
  volume={95},
  pages={1828-1837}
}
Quantum-dot infrared photodetectors have emerged as attractive devices for sensing long wavelength radiation. Their principle of operation is based on absorption of radiation via intersublevel transitions in quantum dots. Multiple layers of self-organized ln(Ga)As/Ga(Al)As quantum dots are generally incorporated in the active region of these devices. Three-dimensional quantum confinement allows normal incidence operation. This paper describes a novel variation in the design of these devices… CONTINUE READING

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