High Temperature Silicon Carbide CMOS Integrated Circuits

@article{Clark2011HighTS,
  title={High Temperature Silicon Carbide CMOS Integrated Circuits},
  author={David T. Clark and E. P. Ramsay and A. E. Murphy and D. A. Smith and R. F. Thompson and R. A. Young and Jennifer D. Cormack and C. Zhu and Stephen J. Finney and John E. Fletcher},
  journal={Materials Science Forum},
  year={2011},
  volume={679-680},
  pages={726 - 729}
}
The wide band-gap of Silicon Carbide (SiC) makes it a material suitable for high temperature integrated circuits [1], potentially operating up to and beyond 450°C. This paper describes the development of a 15V SiC CMOS technology developed to operate at high temperatures, n and p-channel transistor and preliminary circuit performance over temperature achieved in this technology. 
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