High-Temperature Operation of Diamond Junction Field-Effect Transistors With Lateral p-n Junctions

@article{Iwasaki2013HighTemperatureOO,
  title={High-Temperature Operation of Diamond Junction Field-Effect Transistors With Lateral p-n Junctions},
  author={Takayuki Iwasaki and Yuto Hoshino and Kohei Tsuzuki and Hiromitsu Kato and Toshiharu Makino and Masahiko Ogura and Daisuke Takeuchi and Hideyo Okushi and Satoshi Yamasaki and Mutsuko Hatano},
  journal={IEEE Electron Device Letters},
  year={2013},
  volume={34},
  pages={1175-1177}
}
High-temperature performance of diamond junction field-effect transistors (JFETs) with lateral p-n junctions is demonstrated. Diamond JFETs fabricated by n-type selective growth can be operated at 723 K, and show very low leakage currents of ~ 10-13 A and high ON/OFF ratios . Specific on-resistance decreases from 52.2 mΩ·cm2 at 300 K to 1.4 mΩ·cm2 at 723 K… CONTINUE READING