High-Temperature Hall Effect Sensor Based on Epitaxial Graphene on High-Purity Semiinsulating 4H-SiC

@article{Ciuk2019HighTemperatureHE,
  title={High-Temperature Hall Effect Sensor Based on Epitaxial Graphene on High-Purity Semiinsulating 4H-SiC},
  author={T. Ciuk and B. Stańczyk and K. Przyborowska and D. Czołak and A. Dobrowolski and J. Jagiello and W. Kaszub and M. Kozubal and R. Kozłowski and P. Kamiński},
  journal={IEEE Transactions on Electron Devices},
  year={2019},
  volume={66},
  pages={3134-3138}
}
In this report, we demonstrate a novel high-temperature Hall effect sensor that is based on quasi-free-standing monolayer graphene epitaxially grown on high-purity semiinsulating (SI) on-axis 4H-SiC(0001) substrate in a chemical vapor deposition process. To ensure statistical perspective, characteristics of 23 elements are determined as a function of temperature ranging from 300 to 770 K. Passivated with a 100-nm-thick atomic-layer-deposited aluminum oxide, the sensor offers current-mode… Expand
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