High Temperature Characterization of SiC BJTs for Power Switching Applications


In this paper, SiC BJTs with a blocking voltage of 1836V are characterized in power switching applications for temperatures up to 275degC. Inductive switching speeds under different load current and DC bus voltage conditions are also studied. This is the first time a SiC switch has been fully characterized at a practically useful power level (300V, 7A) and… (More)

4 Figures and Tables


  • Presentations referencing similar topics