High Temperature , High Power Module Design for Wide Bandgap Semiconductors : Packaging Architecture and Materials Considerations

@inproceedings{Shen2008HighT,
  title={High Temperature , High Power Module Design for Wide Bandgap Semiconductors : Packaging Architecture and Materials Considerations},
  author={Z. John Shen and Brian Grummel and Ryan McClure and Ali P. Gordon and Allen R. Hefner},
  year={2008}
}
Wide bandgap power semiconductors such as SiC or GaN can safely operate at a junction temperature of 500°C. Such a high operating temperature range can substantially relax or completely eliminate the need for bulky and costly cooling components commonly used in silicon-based power electronic systems. However, a major limitation to fully realizing the… CONTINUE READING