High-Speed Planar GaAs Nanowire Arrays with fmax > 75 GHz by Wafer-Scale Bottom-up Growth.

@article{Miao2015HighSpeedPG,
  title={High-Speed Planar GaAs Nanowire Arrays with fmax > 75 GHz by Wafer-Scale Bottom-up Growth.},
  author={Xin Miao and Kelson D. Chabak and Chen Zhang and Parsian K. Mohseni and Dennis E. Walker and Xiuling Li},
  journal={Nano letters},
  year={2015},
  volume={15 5},
  pages={
          2780-6
        }
}
Wafer-scale defect-free planar III-V nanowire (NW) arrays with ∼100% yield and precisely defined positions are realized via a patterned vapor-liquid-solid (VLS) growth method. Long and uniform planar GaAs NWs were assembled in perfectly parallel arrays to form double-channel T-gated NW array-based high electron mobility transistors (HEMTs) with DC and RF performance surpassing those for all field-effect transistors (FETs) with VLS NWs, carbon nanotubes (CNTs), or graphene channels in-plane with… 
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