High-Speed InGaAs Photodetectors by Selective-Area MOCVD Toward Optoelectronic Integrated Circuits

@article{Geng2014HighSpeedIP,
  title={High-Speed InGaAs Photodetectors by Selective-Area MOCVD Toward Optoelectronic Integrated Circuits},
  author={Yu Geng and Shaoqi Feng and Andrew W. Poon and Kei May Lau},
  journal={IEEE Journal of Selected Topics in Quantum Electronics},
  year={2014},
  volume={20},
  pages={36-42}
}
We report selective-area growth of high-crystalline-quality InGaAs-based photodetectors with optimized InP/GaAs buffers on patterned (100)-oriented silicon-on-insulator (SOI) substrates by metal-organic chemical vapor deposition. The composite GaAs and InP buffer was grown using a two-temperature method. The island morphology of the low-temperature GaAs nucleation layer inside the growth well of the SOI substrate was optimized. A medium temperature GaAs layer was inserted prior to the typical… CONTINUE READING

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