High-Speed GaN-Based Green Light-Emitting Diodes With Partially n-Doped Active Layers and Current-Confined Apertures

@article{Shi2008HighSpeedGG,
  title={High-Speed GaN-Based Green Light-Emitting Diodes With Partially n-Doped Active Layers and Current-Confined Apertures},
  author={J. Shi and J. Sheu and C. Chen and Yung-Hsiang Lin and W.-C. Lai},
  journal={IEEE Electron Device Letters},
  year={2008},
  volume={29},
  pages={158-160}
}
We demonstrate a high-speed GaN-based green light-emitting diode for plastic optical fiber (POF) communication applications. By using a combination of n-type doping and undoped InxGa1-xN/GaN based multiple quantum wells (MQWs), and a 76-mum-diameter current-confined aperture structure, we can obtain an extremely high electrical-to-optical (E-O) 3 dB bandwidth (~330 MHz), which is limited by the spontaneous recombination lifetime of the MQWs. A reasonable coupled power (-264 muW) can be… CONTINUE READING
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