High Speed Carrier Injection 18 Gb/s Silicon Micro-ring Electro-optic Modulator

@article{Manipatruni2007HighSC,
  title={High Speed Carrier Injection 18 Gb/s Silicon Micro-ring Electro-optic Modulator},
  author={Sasikanth Manipatruni and Qianfan Xu and B S Schmidt and Jagat Shakya and Michal Lipson},
  journal={LEOS 2007 - IEEE Lasers and Electro-Optics Society Annual Meeting Conference Proceedings},
  year={2007},
  pages={537-538}
}
  • S. Manipatruni, Qianfan Xu, +2 authors M. Lipson
  • Published 12 November 2007
  • Materials Science
  • LEOS 2007 - IEEE Lasers and Electro-Optics Society Annual Meeting Conference Proceedings
We experimentally demonstrate electrooptic modulation in silicon at 18 Gbps (NRZ) in a micro-ring of 12 micron diameter using a pre-emphasis technique. Device simulations indicate that this technique can extend the bit rate to 40 Gbps. 

Figures from this paper

2.5 Gbps Electro-optic modulator in deposited silicon
We demonstrate GHz-speed electro-optic modulation using microring resonators in a deposited layer of polycrystalline silicon. Active optical devices in a deposited microelectronic material can enable
50 Gbit/s wavelength division multiplexing using silicon microring modulators
We demonstrate 50 Gbit/s modulation using four silicon microring modulators within a footprint of 500 µm2. This is the highest total modulation capacity shown in silicon using compact micro-ring
Ultra high bandwidth WDM using silicon microring modulators.
TLDR
Using the proposed techniques, silicon nanophotonic bandwidths can meet the requirements of future CMOS interconnects by using multiple wavelengths to extend beyond single device speeds.
Large extinction ratio 10 Gbit/s silicon optical modulator based on a reverse biased PIPIN diode
Experimental results of a high-speed silicon optical modulator based on carrier depletion in a pipin diode are presented. 10 Gbit/s data transmission is obtained, with high extinction ratio (ER) of
DPSK modulation using a microring modulator
We present the first experimental demonstration of DPSK modulation using a microring modulator. A 250-Mb/s electro-optic silicon microring modulator is shown with a measured 2-dB power penalty in
High-speed and low-power microring modulators for silicon photonics
Microring-based silicon electro-optic modulators allow high-speed and low-power devices to be fabricated in small footprints. A 30 Gbps reverse-biased microring modulator, and an 8 Gbps
First demonstration of 80-km long-haul transmission of 12.5-Gb/s data using silicon microring resonator electro-optic modulator
First demonstration of long-haul transmission reaching bandwidth-distance product of 1-Tb-km/s, using silicon microring resonator electro-optic modulator, sets new precedence for silicon photonic
Ultra low power electro-optic modulator on silicon: Towards direct logic driven silicon modulators
We demonstrate ultra-low switching energy (9.4 fJ/bit), ultra-low swing voltage (150 mV peak-peak) electro-optic modulation in a 2.5 μm radius silicon ring modulator. These results can enable direct
Broadband hitless silicon electro-optic switch for on-chip optical networks.
TLDR
The demonstrated electro-optical switch is composed of two coupled resonant cavities, each with an independently addressable PIN diode that enables operation of the switch without perturbing adjacent channels in a wavelength division multiplexing (WDM) system.
Broadband hitless silicon electro-optic switch for optical networkson-chip
We report the demonstration of a broadband (60 GHz) hitless switch electrically driven by PIN diodes surrounding two coupled resonant cavities. The topology used enables the switch operation without
...
1
2
3
4
5
...

References

SHOWING 1-8 OF 8 REFERENCES
12.5 Gbit/s carrier-injection-based silicon micro-ring silicon modulators.
We show a scheme for achieving high-speed operation for carrier-injection based silicon electro-optical modulator, which is optimized for small size and high modulation depth. The performance of the
High-speed electrical modulator in high-index-contrast (HIC) Si-waveguides
  • F. Gan, F. Kartner
  • Materials Science, Physics
    (CLEO). Conference on Lasers and Electro-Optics, 2005.
  • 2005
A CMOS-compatible Mach-Zehnder modulator based on strongly forward biased PIN-diodes is proposed, resulting in small signal modulation bandwidths beyond 20 GHz, a figure of merit of V/sub /spl
Silicon electro-optic modulators using p-i-n diodes embedded 10-micron-diameter microdisk resonators.
TLDR
A silicon electro-optic modulator using a 10-micron-diameter microdisk resonator with a laterally integrated p-i-n diode surrounding essentially the entire microdisk to reveal a modulation bandwidth of 510 MHz.
Compact electro-optic modulator on silicon-on-insulator substrates using cavities with ultra-small modal volumes.
We experimentally demonstrate a micron-size electro-optic modulator using a high-index-contrast silicon Fabry-Perot resonator cavity. This compact device consists of a 1-D cavity formed within a
High-speed optical modulation based on carrier depletion in a silicon waveguide.
TLDR
A high-speed and highly scalable silicon optical modulator based on the free carrier plasma dispersion effect is presented that will enable silicon modulators to be one of the key building blocks for integrated silicon photonic chips for next generation communication networks as well as future high performance computing applications.
Micrometre-scale silicon electro-optic modulator
TLDR
Electro-optic modulators are one of the most critical components in optoelectronic integration, and decreasing their size may enable novel chip architectures, and here a high-speed electro-optical modulator in compact silicon structures is experimentally demonstrated.
A high-speed silicon optical modulator based on a metal–oxide–semiconductor capacitor
TLDR
An approach based on a metal–oxide–semiconductor (MOS) capacitor structure embedded in a silicon waveguide that can produce high-speed optical phase modulation is described and an all-silicon optical modulator with a modulation bandwidth exceeding 1 GHz is demonstrated.
CMOS photonicsTM - SOI learns a new trick
  • Proceedings of IEEE International SOI Conference (Institute of Electrical and Electronics Engineers, New York, 2005), pp. 7-13.
  • 2005