High Si content SRO/SiO2 bilayer superlattices with boron and phosphorus doping for next generation Si quantum dot photovoltaics

@article{Yang2015HighSC,
  title={High Si content SRO/SiO2 bilayer superlattices with boron and phosphorus doping for next generation Si quantum dot photovoltaics},
  author={Terry Chien-Jen Yang and Keita Nomoto and Ziyun Lin and Lingfeng Wu and Binesh Puthen-Veettil and Tian Cai Zhang and Xuguang Jia and Gavin J. Conibeer and Ivan Perez-Wurfl},
  journal={2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)},
  year={2015},
  pages={1-6}
}
Si quantum dots or interchangeably Si nanocrystals are promising materials for all-Si tandem solar cells in next generation photovoltaics. Si QDs in this study were fabricated by annealing sputtered Si rich oxide/SiO2 (SRO/SiO2) bilayer superlattice thin-films. Advantages of high Si content SRO layers include lower resistivity and higher light absorption cross-sections which are more suitable for photovoltaic devices. However, theoretically high Si content SRO produces greater size distribution… CONTINUE READING

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