High Responsivity and High Power UTC and MUTC GaInAs-InP Photodiodes

@article{Chtioui2012HighRA,
  title={High Responsivity and High Power UTC and MUTC GaInAs-InP Photodiodes},
  author={Mourad Chtioui and Francois Lelarge and Alain Enard and Fr{\'e}d{\'e}ric Pommereau and Daniele Carpentier and Alexandre Marceaux and Fr{\'e}d{\'e}ric Van Dijk and Mohand Achouche},
  journal={IEEE Photonics Technology Letters},
  year={2012},
  volume={24},
  pages={318-320}
}
We have developed a high-performance uni-traveling-carrier (UTC) and a modified uni-traveling-carrier (MUTC) photodiode (PD). We report a comparison between the two devices comprising both a 1.5- μm-thick absorption layer followed by a 0.5-μm-thick transparent collector layer. Both devices showed simultaneously a high responsivity (larger than 0.92 A/W at 1.55 μm), a high saturation current (larger than 100 mA at 10 GHz), and a high linearity (OIP3 of 35 dBm at 10 GHz). Thanks to a partly… CONTINUE READING

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