High-Q passives for mm-wave SiGe applications

@article{Kaynak2009HighQPF,
  title={High-Q passives for mm-wave SiGe applications},
  author={Mehmet Kaynak and Falk Korndorfer and Christian Wipf and Rene F. Scholz and Bernd Tillack and Wan-Gyu Lee and Young Soo Kim and Jung Jae Yoo and Jeoung Woo Kim},
  journal={2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting},
  year={2009},
  pages={194-197}
}
Deep-silicon etching technique was used for achieving high-Q inductors in a 0.25µm SiGe:C BiCMOS process. Low-resistive silicon regions under passive structures were removed using deep-silicon plasma etch technique. The lithography and etch of the silicon were performed from the backside of the wafer. Both thick (750 µm) and thin (370 µm) 8-inch wafers were processed without any handling and reliability problems. Inductors with different number of turns and values were evaluated. RF… CONTINUE READING