High-Q integrated inductors on trenched silicon islands


An implementation of high quality factor (Q) copper (Cu) inductors on CMOS-grade silicon substrates using a fully CMOS-compatible process is presented. A low-temperature fabrication sequence is employed to reduce the loss of Si wafers at RF frequencies using micromachining technique. This method does not require air suspension of the inductors, resulting in… (More)


13 Figures and Tables