High Q inductors and capacitors on Si substrate

@article{Jenei2001HighQI,
  title={High Q inductors and capacitors on Si substrate},
  author={Snezana Jenei and Stefaan Decoutere and Stefaan Van Huylenbroeck and Guido Vanhorebeek and Bart Nauwelaers},
  journal={2001 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems. Digest of Papers (IEEE Cat. No.01EX496)},
  year={2001},
  pages={64-70}
}
In this paper, the impact of conventional silicon technology parameters on the characteristics of passives is studied. For both inductors and capacitors, cost-effective modules, which integrate easily into wiring BEOL (back-end of line) in a conventional silicon technology and provide high Q factor components are presented. For an inductor of 3 nH, designed for 2 GHz frequency applications, and fabricated in thick Cu as an add-on module, Q factor of /spl sim/24 is reached. The metal insulator… CONTINUE READING

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