High-Q X-band and K-band micromachined spiral inductors for use in Si-based integrated circuits

@article{Lu2000HighQXA,
  title={High-Q X-band and K-band micromachined spiral inductors for use in Si-based integrated circuits},
  author={Liang-Hung Lu and G. E. Ponchak and P R Bhattacharya and L. P. B. Katehi},
  journal={2000 Topical Meetings on Silicon Monolithic Integrated Circuits in RF Systems. Digest of Papers (Cat. No.00EX397)},
  year={2000},
  pages={108-112}
}
A micromachined structure with reduced parasitics is proposed to enhance the resonant frequency and the quality factor (Q) of a spiral inductor. Inductors with various etch depths have been fabricated on a high resistivity Si substrate. Two-port S-parameters are measured to characterize the performance of the inductors. With an etch depth of 20 /spl mu/m, a fabricated 1.8 nH spiral inductor achieves a maximum resonant frequency of 25.6 GHz and a maximum Q of 20.2 at 14.5 GHz. This technology is… CONTINUE READING
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