High-Q Micromachined Inductors for 10-to-30-GHz RFIC Applications on Low Resistivity Si-Substrate

@article{Wang2006HighQMI,
  title={High-Q Micromachined Inductors for 10-to-30-GHz RFIC Applications on Low Resistivity Si-Substrate},
  author={To-Po Wang and Huei Wang},
  journal={2006 European Microwave Conference},
  year={2006},
  pages={56-59}
}
The measured results for quality factor improvement and self-resonance frequency (fsr) improvement of the planar inductors implemented in 0.35-mum two-poly-four-metal (2P4M) CMOS process are presented in this paper. These inductors are fabricated on a low resistivity Si-substrate with a resistance about 33 Omega-cm. It is observed that the quality factors of planar inductors can be increased by the shunt metals from metal1 (M1) to metal4 (M4) to reduce the series resistance at low frequencies… CONTINUE READING

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MetalsNo subtypeSilicon
It is observed that the quality factors of planar inductors can be increased by the shunt metals from metal1 ( M1 ) to metal4 ( M4 ) to reduce the series resistance at low frequencies and by the CMOS compatible post - process to reduce the parasitic capacitance between the inductors and the lossy Si - substrate at high frequencies .
SiliconNo subtypeMetals
It is observed that the quality factors of planar inductors can be increased by the shunt metals from metal1 ( M1 ) to metal4 ( M4 ) to reduce the series resistance at low frequencies and by the CMOS compatible post - process to reduce the parasitic capacitance between the inductors and the lossy Si - substrate at high frequencies .
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