High-Power InP-Based Waveguide Integrated Modified Uni-Traveling-Carrier Photodiodes

@article{Zhou2017HighPowerIW,
  title={High-Power InP-Based Waveguide Integrated Modified Uni-Traveling-Carrier Photodiodes},
  author={Gan Zhou and Patrick Runge and Shahram Keyvaninia and Sten Seifert and Willi Ebert and Sven Mutschall and Angela Seeger and Qinglong Li and Andreas Beling},
  journal={Journal of Lightwave Technology},
  year={2017},
  volume={35},
  pages={717-721}
}
We demonstrate monolithic InP-based high-power high-speed waveguide integrated single and balanced modified UTC photodetectors. The single PD chip generates maximum RF output power levels of 8.9 dBm to 5.1 dBm in the frequency range between 60 GHz and 120 GHz. The balanced PD chip has a 3 dB-bandwidth of 80 GHz and generates 2 dBm RF output power at this frequency. 

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