High-Power 1.3-$\mu$m Quantum-Dot Superluminescent Light-Emitting Diode Grown by Molecular Beam Epitaxy

@article{Ray2007HighPower1Q,
  title={High-Power 1.3-\$\mu\$m Quantum-Dot Superluminescent Light-Emitting Diode Grown by Molecular Beam Epitaxy},
  author={S. Ray and T. Choi and K. M. Groom and H. Liu and M. Hopkinson and R. A. Hogg},
  journal={IEEE Photonics Technology Letters},
  year={2007},
  volume={19},
  pages={109-111}
}
In this letter, we demonstrate the improved performance of 1.3-mum seven-layered InAs-GaAs quantum-dot superluminescent light-emitting diodes by the engineering of the epitaxial growth conditions alone, namely the thickness of the low-temperature GaAs spacer layer between quantum-dot layers. For laser devices, a significant reduction in threshold current… CONTINUE READING