High-Performance a-IGZO Thin-Film Transistor Using $ \hbox{Ta}_{2}\hbox{O}_{5}$ Gate Dielectric

@article{Chiu2010HighPerformanceAT,
  title={High-Performance a-IGZO Thin-Film Transistor Using \$ \hbox\{Ta\}_\{2\}\hbox\{O\}_\{5\}\$ Gate Dielectric},
  author={C. J. Chiu and S. P. Chang and S. J. Chang},
  journal={IEEE Electron Device Letters},
  year={2010},
  volume={31},
  pages={1245-1247}
}
In this letter, we report the fabrication of an amorphous indium gallium zinc oxide (a-IGZO) thin-film transistor with a high-k dielectric layer on a glass substrate. The room-temperature-deposited a-IGZO channel with Ta2O5 exhibits the following operating characteristics: a threshold voltage of 0.25 V, a drain-source current on/off ratio of 105, a subthreshold gate voltage swing of 0.61 V/decade, and a high field-effect mobility of 61.5 cm2/V·s; these characteristics make it suitable for use… CONTINUE READING
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