High-Performance Silicon Photoanodes Passivated with Ultrathin Nickel Films for Water Oxidation

@article{Kenney2013HighPerformanceSP,
  title={High-Performance Silicon Photoanodes Passivated with Ultrathin Nickel Films for Water Oxidation},
  author={Michael J. Kenney and M. Gong and Y. Li and J. Wu and Ju Feng and M. Lanza and H. Dai},
  journal={Science},
  year={2013},
  volume={342},
  pages={836 - 840}
}
  • Michael J. Kenney, M. Gong, +4 authors H. Dai
  • Published 2013
  • Materials Science, Medicine
  • Science
  • Stabilizing Silicon Solar-driven water splitting has potential as an energy storage mechanism to supplement the direct conversion of sunlight to electricity. A submersed integrated device has been proposed both to absorb the light and to catalyze the reaction, but stability has been a problem. Kenney et al. (p. 836; see the Perspective by Turner) found that a nickel coating, thin enough to let light through, could protect a silicon absorber in the alkaline environment of a lithium/potassium… CONTINUE READING
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    References

    SHOWING 1-10 OF 33 REFERENCES
    Bockris, Electrochim
    • Acta 29,
    • 1984
    An advanced Ni-Fe layered double hydroxide electrocatalyst for water oxidation.
    • M. Gong, Y. Li, +7 authors H. Dai
    • Chemistry, Medicine
    • Journal of the American Chemical Society
    • 2013
    • 1,515
    Atomic layer-deposited tunnel oxide stabilizes silicon photoanodes for water oxidation.
    • 517
    • PDF
    During graphene formation on the Si face of a SiC wafer by Si sublimation from the surface, an interfacial C buffer layer
      Effective metal screening and Schottky-barrier formation in metal-GaAs structures
      • 7