High-Performance Plasmonic THz Detector Based on Asymmetric FET With Vertically Integrated Antenna in CMOS Technology

Abstract

We report a high-performance plasmonic terahertz (THz) detector based on an antenna-coupled asymmetric FET by using the 65-nm CMOS technology. By designing an asymmetric FET on a self-aligned poly-Si gate structure, more enhanced channel charge asymmetry between the source and the drain has been obtained in comparison with the nonself-aligned metal gate… (More)

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