High-Performance Near-IR Photodiodes: A Novel Chemistry-Based Approach to Ge and Ge–Sn Devices Integrated on Silicon

@article{Roucka2011HighPerformanceNP,
  title={High-Performance Near-IR Photodiodes: A Novel Chemistry-Based Approach to Ge and Ge–Sn Devices Integrated on Silicon},
  author={Radek Roucka and Jay Mathews and Chun-Jen Weng and Richard T Beeler and John Tolle and J. Menex0301ndez and John Kouvetakis},
  journal={IEEE Journal of Quantum Electronics},
  year={2011},
  volume={47},
  pages={213-222}
}
Ge/Si heterostructure diodes based on n++Si(100)/i-Ge/p-Ge and p++Si(100)/i-Ge/n-Ge stacks and intrinsic region thickness of ~350 and ~900 nm, respectively, were fabricated using a specially developed synthesis protocol that allows unprecedented control of film microstructure, morphology, and purity at complementary metal-oxide-semiconductor compatible conditions. From a growth and doping perspective, a main advantage of our inherently low-temperature (390°C) soft-chemistry approach is that all… CONTINUE READING