High Performance Molybdenum Disulfide Amorphous Silicon Heterojunction Photodetector

@article{EsmaeiliRad2013HighPM,
  title={High Performance Molybdenum Disulfide Amorphous Silicon Heterojunction Photodetector},
  author={Mohammad R. Esmaeili-Rad and Sayeef S. Salahuddin},
  journal={Scientific Reports},
  year={2013},
  volume={3}
}
One important use of layered semiconductors such as molybdenum disulfide (MoS2) could be in making novel heterojunction devices leading to functionalities unachievable using conventional semiconductors. Here we demonstrate a metal-semiconductor-metal heterojunction photodetector, made of MoS2 and amorphous silicon (a-Si), with rise and fall times of about 0.3 ms. The transient response does not show persistent (residual) photoconductivity, unlike conventional a-Si devices where it may last 3–5… 
Fabrication and Characterization of Near Infrared Molybdenum Disulfide/Silicon Heterojunction Photodetector by Drop Casting Method
In this work, a highly efficient, molybdenum disulfide (MoS2) based near infrared (NIR) heterojunction photodetector is fabricated on a Si substrate using a cost-effective and simple drop casting
Heterojunction Hybrid Devices from Vapor Phase Grown MoS2
TLDR
A vertically-stacked hybrid photodiode consisting of a thin n-type molybdenum disulfide layer transferred onto p-type silicon is investigated, which exhibits notable photoconductivity and a blue-shift of the spectral response into the visible range.
High-Speed Scalable Silicon-MoS2 P-N Heterojunction Photodetectors
TLDR
The Si/MoS2 heterojunction is found to be sensitive to broadband wavelengths ranging from visible to near-infrared light with maximum detectivity up to ≈1.4 × 1012 Jones (2 V bias).
High-performing MoS2-embedded Si photodetector
Abstract Transition metal dichalcogenides (TMDs) are a new class of materials that replace advanced functional materials like graphene, CNT etc., in photovoltaics and sensors. In the present work,
High-Performance Hybrid Electronic Devices from Layered PtSe2 Films Grown at Low Temperature.
TLDR
This study reports the large-scale synthesis of thin films of platinum diselenide (PtSe2), a thus far scarcely investigated transition metal dichalcogenide, representing a breakthrough for the direct integration of this material with silicon (Si) technology.
Revisiting Metal Sulfide Semiconductors: A Solution‐Based General Protocol for Thin Film Formation, Hall Effect Measurement, and Application Prospects
Nanostructured thin films of metal sulfides (MS) are highly desirable materials for various optoelectronic device applications. However, a general low-temperature protocol that describes deposition
Few-Layer MoS2/a-Si:H Heterojunction Pin-Photodiodes for Extended Infrared Detection
Few-layer molybdenum disulfide (FL-MoS2) films have been integrated into amorphous silicon (a-Si:H) pin-photodetectors. To achieve this, vertical a-Si:H photodiodes were grown by plasma-enhanced
Photoresponse characteristics of MoS2 QDs/Si nanocone heterojunctions utilizing geometry controlled light trapping mechanism in black Si.
TLDR
Finite element based optical simulation results revealed the superiority of MoS2 QDs/Si nano-conical heterojunctions due to improved light trapping and appear attractive for next generation Si CMOS compatible broad band photodetectors using two dimensional semiconductors.
Si-MoS2 Vertical Heterojunction for a Photodetector with High Responsivity and Low Noise Equivalent Power.
TLDR
The fabrication of a photodetector based on the heterostructure of p-type Si and n-type MoS2 shows excellent performance and could be utilized for various optoelectronic devices for low-light detection.
High performance photodetector based on Pd-single layer MoS2 Schottky junction
Due to excellent photoelectric property of single layer molybdenum disulphide (SL MoS2), different kinds of photodetectors based on SL MoS2 have been reported. Although high photosensitivity was
...
1
2
3
4
5
...

References

SHOWING 1-10 OF 27 REFERENCES
Integrated circuits based on bilayer MoS₂ transistors.
TLDR
This paper demonstrates an inverter, a NAND gate, a static random access memory, and a five-stage ring oscillator based on a direct-coupled transistor logic technology based on the semiconducting nature of molybdenum disulfide.
Single-layer MoS2 transistors.
TLDR
Because monolayer MoS(2) has a direct bandgap, it can be used to construct interband tunnel FETs, which offer lower power consumption than classical transistors, and could also complement graphene in applications that require thin transparent semiconductors, such as optoelectronics and energy harvesting.
Single-layer MoS2 phototransistors.
TLDR
The unique characteristics of incident-light control, prompt photoswitching, and good photoresponsivity from the MoS(2) phototransistor pave an avenue to develop the single-layer semiconducting materials for multifunctional optoelectronic device applications in the future.
MoS₂ nanosheet phototransistors with thickness-modulated optical energy gap.
TLDR
The fabrication of top-gate phototransistors based on a few-layered MoS(2) nanosheet with a transparent gate electrode exhibited excellent photodetection capabilities for red light, while those with single- and double-layers turned out to be quite useful for green light detection.
Electrical characterization of back-gated bi-layer MoS2 field-effect transistors and the effect of ambient on their performances
Two-dimensional transition-metal dichalcogenides such as MoS2 are promising channel materials for transistor scaling. Here, we report the performance and environmental effects on back-gated bi-layer
Multilayer transition-metal dichalcogenide channel Thin-Film Transistors
We show that multilayered transition-metal dichalcogenides such as multilayer MoS2 present a compelling case for Thin-Film Transistors (TFTs) for large-area display technology. Through a combined
Graphene Barristor, a Triode Device with a Gate-Controlled Schottky Barrier
TLDR
It is shown that for a graphene-silicon interface, Fermi-level pinning can be overcome and a triode-type device with a variable barrier, a “barristor,” can be made and used to create devices such as inverters.
High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals.
TLDR
This is the first comprehensive investigation of process-friendly multilayer molybdenum disulphide field-effect transistors and their results provide potentially important implications in the fabrication of high-resolution large-area displays and further scientific investigation of various physical properties expected in other layered semiconductors.
Band gap engineering of amorphous silicon quantum dots for light-emitting diodes
Amorphous silicon quantum dots (a-Si QDs), which show a quantum confinement effect were grown in a silicon nitride film by plasma-enhanced chemical vapor deposition. Red, green, blue, and white
Thin Film Solar Cells: Fabrication, Characterization and Applications
Series Preface. Preface. 1. Epitaxial thin-film crystalline Si solar cells on low-cost Si carriers (Jef Poortmans). 2.Crystalline Silicon Thin-Film Solar Cells on Foreign Substrates by
...
1
2
3
...