High Performance Molybdenum Disulfide Amorphous Silicon Heterojunction Photodetector

@inproceedings{EsmaeiliRad2013HighPM,
  title={High Performance Molybdenum Disulfide Amorphous Silicon Heterojunction Photodetector},
  author={Mohammad R. Esmaeili-Rad and Sayeef Salahuddin},
  booktitle={Scientific reports},
  year={2013}
}
One important use of layered semiconductors such as molybdenum disulfide (MoS2) could be in making novel heterojunction devices leading to functionalities unachievable using conventional semiconductors. Here we demonstrate a metal-semiconductor-metal heterojunction photodetector, made of MoS2 and amorphous silicon (a-Si), with rise and fall times of about 0.3 ms. The transient response does not show persistent (residual) photoconductivity, unlike conventional a-Si devices where it may last 3-5… CONTINUE READING
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