High Performance Micro-Crystallized TaN/SrTiO3/TaN Capacitors for Analog and RF Applications

@article{Chiang2006HighPM,
  title={High Performance Micro-Crystallized TaN/SrTiO3/TaN Capacitors for Analog and RF Applications},
  author={K C Chiang and C. C. Huang and A. Chin and W. J. Chen and H. L. Kao and Minghui Hong and Jung Hyeok Kwo},
  journal={2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers.},
  year={2006},
  pages={102-103}
}
Using micro-crystallized high-k SrTiO<sub>3</sub> on N<sup>+</sup>-treated TaN, very high 28 fF/mum<sup>2</sup> capacitance density, low voltage linearity (alpha) of 92 ppm/V<sup>2</sup> and small leakage of 3times10<sup>-8</sup> A/cm<sup>2</sup> at 2V are beyond ITRS spec of analog capacitor at year 2018. Further improving to 44 fF/mum<sup>2</sup> and low alpha of 54 ppm/V<sup>2</sup> are obtained for higher speed analog/RF ICs at 2 GHz 
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