High-Performance Metal-Insulator-Metal Tunnel Diode Selectors

@article{Govoreanu2014HighPerformanceMT,
  title={High-Performance Metal-Insulator-Metal Tunnel Diode Selectors},
  author={Bogdan Govoreanu and Christoph Adelmann and A. Redolfi and Leqi Zhang and Sergiu Clima and Malgorzata Jurczak},
  journal={IEEE Electron Device Letters},
  year={2014},
  volume={35},
  pages={63-65}
}
We report on a novel high-performance metal-insulator-metal tunnel diode, with ultrathin atomic layer deposited Ta2O5, for bidirectional selector applications in resistive switching memory. The diode exhibits high drive current of over 105 A/cm2, high nonlinearity, and fast turn-on and turn-off times in the below-ns range. A very good uniformity for structures down to 40 nm size and excellent ac endurance is demonstrated, well exceeding the stand-alone nonvolatile memory requirements. 

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