High-Performance InGaZnO Thin-Film Transistors Using HfLaO Gate Dielectric

@article{Su2009HighPerformanceIT,
  title={High-Performance InGaZnO Thin-Film Transistors Using HfLaO Gate Dielectric},
  author={N. C. Su and S. J. Wang and A. Chin},
  journal={IEEE Electron Device Letters},
  year={2009},
  volume={30},
  pages={1317-1319}
}
In this letter, we report a low-voltage-driven amorphous indium-gallium-zinc oxide thin-film transistor with a high-kappa-value HfLaO gate dielectric. Good characteristics were achieved including a low <i>VT</i> of 0.22 V, small subthreshold swing of 76 mV/dec, high mobility of 25 cm<sup>2</sup>/ Vmiddots, and large <i>I</i> <sub>on</sub>/<i>I</i> <sub>off</sub> ratio of 5 times 10<sup>7</sup>. These good performances are obtained at an operation voltage as low as 2 V. These characteristics are… CONTINUE READING
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