High Performance High-k/Metal Gate Ge pMOSFETs with gate lengths down to 125 nm and halo implant

@article{Jaeger2007HighPH,
  title={High Performance High-k/Metal Gate Ge pMOSFETs with gate lengths down to 125 nm and halo implant},
  author={Brice De Jaeger and Gabriel Nicholas and D. P. Borneo and Geert Eneman and Marc Meuris and M H Heyns},
  journal={ESSDERC 2007 - 37th European Solid State Device Research Conference},
  year={2007},
  pages={462-465}
}
Ge pMOSFETs with gate lengths down to 125 nm are fabricated in a Si-like process flow. The addition of a halo implant reduces VT roll-off from 207 mV to 36 mV, and DIBL from 230 mV/V to 54 mV/V. Ion of 770 muA/mum is attained for Ioff of 8.8 nA/mum at VDD = -1.5 V, when evaluating from the source. Benchmarking shows these Ge pMOSFETs have the potential to… CONTINUE READING