High-Performance Depletion/Enhancement-ode $\beta$ -Ga2O3 on Insulator (GOOI) Field-Effect Transistors With Record Drain Currents of 600/450 mA/mm

@article{Zhou2017HighPerformanceD,
  title={High-Performance Depletion/Enhancement-ode \$\beta\$ -Ga2O3 on Insulator (GOOI) Field-Effect Transistors With Record Drain Currents of 600/450 mA/mm},
  author={Hong Zhou and Mengwei Si and Sami S. Alghamdi and Gang Qiu and Lingming Yang and Peide D. Ye},
  journal={IEEE Electron Device Letters},
  year={2017},
  volume={38},
  pages={103-106}
}
In this letter, we report on high-performance depletion/enhancement-mode β-Ga<sub>2</sub>O<sub>3</sub> on insulator (GOOI) field-effect transistors (FETs) with record high drain currents (I<sub>D</sub>) of 600/450 mA/mm, which are nearly one order of magnitude higher than any other reported I<sub>D</sub> values. The threshold voltage (V<sub>T</sub>) can be modulated by varying the thickness of the β-Ga<sub>2</sub>O<sub>3</sub> films and the E-mode GOOI FET can be simply achieved by shrinking… CONTINUE READING
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