High Performance 0.1-μm-Self-Aligned-Gate GaAs MESFET Technology

@article{Nishimura1996HighP0,
  title={High Performance 0.1-μm-Self-Aligned-Gate GaAs MESFET Technology},
  author={Kazumi Nishimura and Kiyomitsu Onodera and Shinji Aoyama and Masami Tokumitsu and Kimiyoshi Yamasaki},
  journal={ESSDERC '96: Proceedings of the 26th European Solid State Device Research Conference},
  year={1996},
  pages={865-868}
}
We report on 0.1-μm Au/WSiN-gate GaAs MESFET technology. We demonstrate FET uniformity in a wafer and excellent high-frequency performance; the standard deviation of the threshold voltages is 0.058 V and the current-gain-cutoff-frequency (fT ) is 140 GHz. 

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26 GHz GaAs Room Temperature Dynamic Divider Circuit," IEEEGaAs IC Symp, PP

JJ Jensen
IEEE MTT-S Digest, • 1992

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