High-Performance$hboxSrTiO_3$MIM Capacitors for Analog Applications

@article{Chiang2006HighPerformancehboxSrTiO_3MIMCF,
  title={High-Performance\$hboxSrTiO_3\$MIM Capacitors for Analog Applications},
  author={K C Chiang and Ching-Chien Huang and G. L. Chen and Wen Jauh Chen and H. L. Kao and Yung-Hsien Wu and A S Chin and S. P. McAlister},
  journal={IEEE Transactions on Electron Devices},
  year={2006},
  volume={53},
  pages={2312-2319}
}
TaN/SrTiO<sub>3</sub>/TaN capacitors with a capacitance density of 28-35 fF/mum<sup>2</sup> have been developed by using a high-kappa (kappa=147-169) SrTiO<sub>3</sub> dielectric containing nanometer-sized microcrystals (3-10 nm). A small capacitance effective thickness was achieved by reducing the interfacial TaON using N<sup>+ </sup> treatment on the lower TaN electrode during post-deposition annealing. The small (92 ppm/V<sup>2</sup>) voltage coefficient of the capacitance and the 3times10… CONTINUE READING

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