High-Performanc with R

Abstract

Recently, Molybdenum Disulphide (MoS2) promising candidate for low-power digital appli to monolayer (1L) MoS2, few-layer MoS2 (FL-M due to its higher density of states (DOS). Howeve study of FL-MoS2 field-effect-transistor (FET) paper, we report a high-performance FL-MoS2 FE contact resistance (~0.8 kΩ.μm) that is close to t silicon contacts in CMOS… (More)

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Cite this paper

@inproceedings{Liu2013HighPerformancWR, title={High-Performanc with R}, author={Wei Liu and Jiahao Kang and Wei Cao and E Sarkar and Yasin Khatami and Debdeep Jena}, year={2013} }