High Mobility Strained Ge pMOSFETs With High-$\kappa$ /Metal Gate

@article{Nicholas2007HighMS,
  title={High Mobility Strained Ge pMOSFETs With High-\$\kappa\$ /Metal Gate},
  author={G White Nicholas and T. J. Grasby and D.J.F. Fulgoni and C. S. Beer and James Jerome Parsons and Mark Meuris and M Heyns},
  journal={IEEE Electron Device Letters},
  year={2007},
  volume={28},
  pages={825-827}
}
Compressively strained Ge long channel ring-type pMOSFETs with high-kappa Si/SiO<sub>2</sub>/HfO<sub>2</sub>/TiN gate stacks are fabricated on Si<sub>0.2</sub>Ge<sub>0.8</sub> virtual substrates. Effective oxide thickness is approximately 1.4 nm with low gate leakage current. A peak hole mobility of 640 cm<sup>2</sup>/ Vldrs and up to a four times enhancement over the Si/SiO<sub>2</sub> universal curve are observed. Parasitic conduction within the Si-cap layers degrades the mobility at large… CONTINUE READING

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