High-Mobility Ge pMOSFET With 1-nm EOT $\hbox{Al}_{2} \hbox{O}_{3}/\hbox{GeO}_{x}/\hbox{Ge}$ Gate Stack Fabricated by Plasma Post Oxidation

@article{Zhang2012HighMobilityGP,
  title={High-Mobility Ge pMOSFET With 1-nm EOT \$\hbox\{Al\}_\{2\} \hbox\{O\}_\{3\}/\hbox\{GeO\}_\{x\}/\hbox\{Ge\}\$ Gate Stack Fabricated by Plasma Post Oxidation},
  author={Rui Zhang and Takayuki Iwasaki and Noriyuki Taoka and Mitsuru Takenaka and Shinichi Takagi},
  journal={IEEE Transactions on Electron Devices},
  year={2012},
  volume={59},
  pages={335-341}
}
An ultrathin equivalent oxide thickness (EOT) Al<sub>2</sub>O<sub>3</sub>/ GeO<sub>x</sub>/Ge gate stack with a superior GeO<sub>x</sub>/Ge metal-oxide-semiconductor (MOS) interface and p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) using this gate stack have been fabricated by a plasma post oxidation method. The properties of the GeO<sub>x</sub>/ Ge MOS interfaces are systemically investigated, and it is revealed that there is a universal relationship between the… CONTINUE READING
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