High Holding Voltage SCR-LDMOS Stacking Structure With Ring-Resistance-Triggered Technique

@article{Ma2013HighHV,
  title={High Holding Voltage SCR-LDMOS Stacking Structure With Ring-Resistance-Triggered Technique},
  author={Fei Chun Ma and Bin Zhang and Yan Han and Jianfeng Zheng and Bo Song and Shurong Dong and Hailian Liang},
  journal={IEEE Electron Device Letters},
  year={2013},
  volume={34},
  pages={1178-1180}
}
A novel ring-resistance-triggered stacked SCR-laterally diffused MOSs has been successfully verified in a 0.35 μm, 30-V/5-V bipolar CMOS DMOS process to solve the coupling of trigger voltage and holding voltage in stacking structures. The holding voltage of the proposed structure can be modulated by varying stacking numbers, and a high holding voltage of 22 V has been achieved using six stacks. On the other side, the trigger voltage almost keeps constant at ~ 53 V and a high failure current of… CONTINUE READING
Highly Cited
This paper has 18 citations. REVIEW CITATIONS