High Gain and Fast Detection of Warfare Agents Using Back-Gated Silicon-Nanowired MOSFETs

@article{Passi2011HighGA,
  title={High Gain and Fast Detection of Warfare Agents Using Back-Gated Silicon-Nanowired MOSFETs},
  author={Vikram Passi and Florent Ravaux and Emmanuel Dubois and Simon Clavaguera and Alexandre Carella and Caroline Celle and J-P Simonato and Luca Silvestri and S.. Reggiani and Dominique Vuillaume and J-P. Raskin},
  journal={IEEE Electron Device Letters},
  year={2011},
  volume={32},
  pages={976-978}
}
The top-down fabrication of doped p-type silicon-nanowired (NW) arrays and their application as gas detectors is presented. After surface functionalization with 3-(4-ethynylbenzyl)-1, 5, 7-trimethyl-3-azabicyclo [3.3.1] nonane-7-methanol molecules, the wires were subjected to an organophosphorous simulant, and both static and dynamic measurements were performed. A current gain of 4 × 106 is obtained upon the detection of the subpart-per-million concentration of a nerve-agent simulant. This… CONTINUE READING
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