High Gain, Temperature Compensated EHF Gallium Arsenide MESFET Amplifier

@article{Arno1d1984HighGT,
  title={High Gain, Temperature Compensated EHF Gallium Arsenide MESFET Amplifier},
  author={J. Arno1d and C. H. Ox1ey},
  journal={1984 14th European Microwave Conference},
  year={1984},
  pages={494-499}
}
This paper describes the development of a state of the art high gain (32 ±0.5 dB), low noise GaAs MESFET amplifier operating over the frequency range 27.5 to 30 GHz for use in European high capacity 30/20 GHz satellite transponders. The amplifier utilises 0.3 ¿m gate length MESFETs with total gate widths of 100¿m and quartz microstrip matching circuits to… CONTINUE READING