High-Frequency ZnO Thin-Film Transistors on Si Substrates


Record microwave frequency performance was achieved with nanocrystalline ZnO thin-film transistors fabricated on Si substrates. Devices with 1.2-mum gate lengths and Au-based gate metals had current and power gain cutoff frequencies of f<sub>T</sub> = 2.45 GHz and f<sub>max</sub> = 7.45 GHz, respectively. Same devices had drain-current on/off ratios of 5… (More)


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