High-Frequency Scalable Electrical Model and Analysis of a Through Silicon Via (TSV)

  title={High-Frequency Scalable Electrical Model and Analysis of a Through Silicon Via (TSV)},
  author={Joohee Kim and Jun so Pak and Jonghyun Cho and Eakhwan Song and Jeonghyeon Cho and Heegon Kim and Taigon Song and Junho Lee and Hyungdong Lee and Kunwoo Park and Seungtaek Yang and Min-Suk Suh and Kwang-yoo Byun and Joungho Kim},
  journal={IEEE Transactions on Components, Packaging and Manufacturing Technology},
We propose a high-frequency scalable electrical model of a through silicon via (TSV). The proposed model includes not only the TSV, but also the bump and the redistribution layer (RDL), which are additional components when using TSVs for 3-D integrated circuit (IC) design. The proposed model is developed with analytic RLGC equations derived from the physical configuration. Each analytic equation is proposed as a function of design parameters of the TSV, bump, and RDL, and is therefore, scalable… CONTINUE READING
Highly Influential
This paper has highly influenced 20 other papers. REVIEW HIGHLY INFLUENTIAL CITATIONS
Highly Cited
This paper has 275 citations. REVIEW CITATIONS
195 Citations
19 References
Similar Papers


Publications citing this paper.
Showing 1-10 of 195 extracted citations

276 Citations

Citations per Year
Semantic Scholar estimates that this publication has 276 citations based on the available data.

See our FAQ for additional information.


Publications referenced by this paper.
Showing 1-10 of 19 references

and R

  • I. Savidis, S. M. Alam, A. Jain, S. Pozder, R. E. Jones
  • Chatterjee, “Electrical modeling and…
  • 2010

and B

  • C. Bermond, L. Cadix, A. Farcy, T. Lacrevaz, P. Leduc
  • Flechet, “High frequency characterization and…
  • 2009
1 Excerpt

and P

  • L. Cadix, A. Farcy, +9 authors B. Flechet
  • Ancey, “Modelling of through silicon via RF…
  • 2009

Similar Papers

Loading similar papers…