High Efficiency GaN HEMT Power Amplifier optimized for OFDM EER Transmitter

@article{Hong2007HighEG,
  title={High Efficiency GaN HEMT Power Amplifier optimized for OFDM EER Transmitter},
  author={S. Hong and Y. Woo and Ildu Kim and J. Kim and J. Moon and H. Kim and J. Lee and B. Kim},
  journal={2007 IEEE/MTT-S International Microwave Symposium},
  year={2007},
  pages={1247-1250}
}
  • S. Hong, Y. Woo, +5 authors B. Kim
  • Published 2007
  • Materials Science
  • 2007 IEEE/MTT-S International Microwave Symposium
We have proposed a highly efficient power amplifier (PA) for the envelope elimination and restoration (EER) transmitter using gallium nitride (GaN) HEMT. The class AB, B, C and F mode PAs have been implemented with EUDYNA's 10 watts GaN HEMT and compared the bias modulation performances in order to investigate the optimum PA structure. The proposed class F mode PA has been biased at class C and adopted a new output matching topology that improves the overall transmitter efficiency. For the… Expand
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