High Drain Current Density E-Mode ${\rm Al}_{2}{\rm O}_{3}$/AlGaN/GaN MOS-HEMT on Si With Enhanced Power Device Figure-of-Merit $(4\times 10^{8}~{\rm V}^{2}\Omega^{-1}{\rm cm}^{-2})$

@article{Freedsman2013HighDC,
  title={High Drain Current Density E-Mode \$\{\rm Al\}_\{2\}\{\rm O\}_\{3\}\$/AlGaN/GaN MOS-HEMT on Si With Enhanced Power Device Figure-of-Merit \$(4\times 10^\{8\}~\{\rm V\}^\{2\}\Omega^\{-1\}\{\rm cm\}^\{-2\})\$},
  author={Joseph J. Freedsman and Toshiharu Kubo and Takashi Egawa},
  journal={IEEE Transactions on Electron Devices},
  year={2013},
  volume={60},
  pages={3079-3083}
}
In this paper, we report on the enhancement-mode (E-mode) Al<sub>2</sub>O<sub>3</sub>/AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors (MOS-HEMTs) on Si. The E-mode operation is due to the negative charges in the atomic layer deposited Al<sub>2</sub>O<sub>3</sub> layer. The unrecessed E-mode MOS-HEMTs exhibit high drain current density… CONTINUE READING