High-Detectivity and High-Single-Photon-Detection-Efficiency 4H-SiC Avalanche Photodiodes

@article{Bai2009HighDetectivityAH,
  title={High-Detectivity and High-Single-Photon-Detection-Efficiency 4H-SiC Avalanche Photodiodes},
  author={Xiaogang Bai and Han-Din Liu and D. Mcintosh and J. C. Campbell},
  journal={IEEE Journal of Quantum Electronics},
  year={2009},
  volume={45},
  pages={300-303}
}
We report large-area, 250-mum-diameter, 4H-SiC avalanche photodiodes with low dark current and high gain. At room temperature, the dark current density is 59.5 nA/cm2 at a gain of 1000. An external quantum efficiency of 48% at 280 nm is achieved at unity gain with a recessed-window structure. The differential resistance of the recessed-window device at zero bias is estimated to be 6times1014 Omega. As a result of high external quantum efficiency, large area, and large differential resistance, a… CONTINUE READING

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