High Density and Low Leakage Current in $ \hbox{TiO}_{2}$ MIM Capacitors Processed at 300 $^{\circ} \hbox{C}$

Abstract

We report Ir/TiO<sub>2</sub>/TaN metal-insulator-metal capacitors processed at only 300degC, which show a capacitance density of 28 fF/mum<sup>2</sup> and a leakage current of 3 times 10<sup>-8</sup> (25degC) or 6 times 10<sup>-7</sup> (125degC) A/cm<sup>2</sup> at -1 V. This performance is due to the combined effects of 300degC nanocrystallized high-kappa… (More)

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