High-Density Through Silicon Vias for 3-D LSIs

@article{Koyanagi2009HighDensityTS,
  title={High-Density Through Silicon Vias for 3-D LSIs},
  author={Mitsumasa Koyanagi and Takafumi Fukushima and Tetsu Tanaka},
  journal={Proceedings of the IEEE},
  year={2009},
  volume={97},
  pages={49-59}
}
High density through silicon via (TSV) is a key in fabricating three-dimensional (3-D) large-scale integration (LSI). We have developed polycrystalline silicon (poly-Si) TSV technology and tungsten (W)/poly-Si TSV technology for 3-D integration. In the poly-Si TSV formation, low-pressure chemical vapor deposition poly-Si heavily doped with phosphorus was conformally deposited into the narrow and deep trench formed in a Si substrate after the surface of Si trench was thermally oxidized. In the W… CONTINUE READING
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