High Density Spin-Transfer Torque (STT)-MRAM Based on Cross-Point Architecture

@article{Zhao2012HighDS,
  title={High Density Spin-Transfer Torque (STT)-MRAM Based on Cross-Point Architecture},
  author={Weisheng Zhao and Sumanta Chaudhuri and Celso Accoto and J.-O. Klein and Dafine Ravelosona and Claude Chappert and Pascale Mazoyer},
  journal={2012 4th IEEE International Memory Workshop},
  year={2012},
  pages={1-4}
}
Spin transfer torque magnetic random access memory (STT-MRAM) is considered as one of the most promising candidates to build up a true universal memory thanks to its fast write/read speed, infinite endurance and non-volatility. However the conventional access architecture based on 1 transistor + 1 memory cell limits its storage density as the selection transistor should be large enough to ensure the write current higher than the critical current for the STT operation. This paper describes a… CONTINUE READING
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MTJ / CMOS Hybrid Logic Circuits

  • W. S. Zhao
  • IEEE Transactions on Magnetics,
  • 2009
Highly Influential
3 Excerpts

Compact modeling of Perpendicular-Anistropy CoFeB/MgO Magnetic Tunnel Junctions

  • Y. Zhang
  • IEEE Transactions on Electron Devices, vol.59,
  • 2011
2 Excerpts

The emergence of spin electronics in data storage

  • C. Chappert, A. Fert, F. N. Van Dau
  • Nature Materials,
  • 2007
6 Excerpts

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