High Conversion Efficiency InP/InGaAs Strained Quantum Well Infrared Photodetector Focal Plane Array With 9.7 <formula formulatype="inline"> <tex Notation="TeX">$\mu$</tex></formula>m Cut-Off for High-Speed Thermal Imaging

Abstract

InP/InGaAs material system is an alternative to AlGaAs/GaAs for long wavelength quantum well infrared photodetectors (QWIPs). We demonstrate a large format (640 × 512) QWIP focal plane array (FPA) constructed with the strained InP/InGaAs material system. The strain introduced to the structure through utilization of In<sub>0.48</sub>Ga<sub>0.52</sub>As… (More)

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