High Breakdown Voltage AlGaN/GaN MIS-HEMT with SiN and TiO/sub 2/ Gate Insulator

@article{Yagi2005HighBV,
  title={High Breakdown Voltage AlGaN/GaN MIS-HEMT with SiN and TiO/sub 2/ Gate Insulator},
  author={Shuichi Yagi and Mitsuaki Shimizu and Mami Inada and Yoshiyuki Yamamoto and Guanxi Piao and Yoshiki Yano and Hajime Okumura},
  journal={2005 International Semiconductor Device Research Symposium},
  year={2005},
  pages={280-281}
}
The AlGaN/GaN high electron mobility transistors (HEMTs) are promising not only as the high speed device for wireless communication applications but also as the high-voltage switching devices, since the GaN have high electrical strength of more than 2 MV/cm. The simulation showed possibility that GaN-based FET has the characteristic better than SiC-based FET [1]. One of the important points for devise design for the high-voltage switching applications is reduction of the gate leak current. The… CONTINUE READING