High Breakdown ($> \hbox{1500\ V}$) AlGaN/GaN HEMTs by Substrate-Transfer Technology

@article{Lu2010HighB,
  title={High Breakdown (\$> \hbox\{1500\ V\}\$) AlGaN/GaN HEMTs by Substrate-Transfer Technology},
  author={Bin Lu and Tomax0301s Palacios},
  journal={IEEE Electron Device Letters},
  year={2010},
  volume={31},
  pages={951-953}
}
In this letter, we present a new technology to increase the breakdown voltage of AlGaN/GaN high-electron-mobility transistors (HEMTs) grown on Si substrates. This new technology is based on the removal of the original Si substrate and subsequent transfer of the AlGaN/GaN HEMT structure to an insulating carrier wafer (e.g., glass or polycrystalline AlN). By applying this new technology to standard AlGaN/GaN HEMTs grown on Si substrate, an AlGaN/GaN HEMT with breakdown voltage above 1500 V and… CONTINUE READING
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